Description
CuCrP2S6 is a layered material that exhibits ferromagnetic and ferroelectric (overall multiferroic) order in the monolayer limit[ 1]. CuCrP2S6 consists of a chalcogenide (sulfur) framework with the octahedral sites filled by Cu, Cr, and P–P in a triangular pattern. It has been predicted that these material exhibit band gap values ranging from 1.0 eV to 1.4 eV in the monolayer form. Our CuCrP2S6 crystals has been primary grown by flux zone growth technique which is free of any transporting agents, and thus flux zone grown crystals are crystallized better and contains less far less defects compared to chemical vapor transport (CVT) grown materials. By default our R&D team will ship flux grown samples but we can offer lower grade CVT grown samples on-demand.
Overall properties of CuCrP2S6 crystals
| Crystal size | ~3-5mm |
| Material properties | Ferromagnetic & ferrolelectric |
| Unit cell parameters | Hexagonal phase |
| Unit cell parameters | a=0.592 nm, b=1.030, c=1.337 nm; β=106.56° |
| Growth method | Default: Flux zone growth (highest grade) Alternative: Chemical vapor transport (lower grade) |
| Purity | 99.9999% confirmed |
XRD dataset collected from CuCrP2S6 crystals
References
[1] J. Qi, H. Wang, X. Chen, and X. Qian Appl. Phys. Lett. 113, 043102 (2018)
Additional Information
Elements: |
Cu,Cr,P,S |
Element: |
Copper |
Element: |
Chromium |
Element: |
Phosphorus |
Element: |
Sulfur |
Formula: |
CuCrP2S6 |
Material class: |
Phosphide |
Properties: |
Semiconductor |
Properties: |
Magnet |
Band gap range: |
IR |
Band gap range: |
VIS |
Growth method: |
Flux |
Growth method: |
CVT |
Doping: |
Undoped |
