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We offer 1 cm2 (10x10x1mm) ultra high purity In2Se3 single crystals with exceptionally low defect density in the alpha phase. These crystals are exfoliation ready, highly uniform, oriented in 002 direction, and ideal for electronic, optical, and...

2 Inch Wafer Scale 2D Materials on Sapphire and SiO2/Si Our 2 inch wafer scale 2D materials platform includes MoS2, MoSe2, WS2, WSe2, graphene, and hBN grown on premium sapphire and SiO2/Si substrates. Monolayer films are available as standard products,...

Custom 2D Solutions – On Demand We offer custom 2D material solutions tailored to your exact specifications—including solution type, concentration, material composition, and even alloyed variants. Any material from our catalog can be...

Our R&D has developed scalable methods to transfer 2D CVD grown sheets back to back to create 2D vertical heterojunctions. Even though 2D semiconductors R&D team uses chemical free transfer process, it is anticipated to observe transfer (strain,...

Our R&D has developed scalable methods to transfer 2D CVD grown sheets back to back to create 2D Heterojunctions. Even though 2D semiconductors R&D team uses chemical free transfer process, it is anticipated to observe transfer (strain,...

4 Inch Full Coverage Monolayer TMDs on Sapphire We offer high quality 4 inch full area coverage MoS2, MoSe2, WS2, and WSe2 and other monolayers or few-layers on 4 inch c-cut double side polished sapphire wafers. Our films exhibit strong...

5-Pack CVD Diamond on Silicon Our 5-pack CVD Diamond on Silicon (10x10mm size) product provides one of the most affordable entry points into diamond-based quantum materials research. Each package contains five 1cm2 thin-film CVD diamond samples deposited...

We offer the largest size Bridgman grown As2S3 crystals in the world at unmatched quality. As2S3 comes in perfect 2:3 stoichiometry, large single crystal domain size, minimal defect density, and perfected purity level (99.9998%) are achieved. In the bulk...

As2Te3 single crystals are crystallized in the α phase and belongs to monoclinic C2/m space group. As2Te3 crystals exhibit topological insulator and thermoelectric behavior, in the bulk it is a narrow gap semiconductor with ~0.24 eV band gap...

Bi2O2Se belongs to M2X3 bismuth chalcogen tetradymite family of layered materials. It has been found to be a promising high thermal velocity ballistic semiconductor replacing silicon. Our Bi2O2Se crystals have been synthesized at high temperature...

Bi2O2Se is a new high mobility IR semiconductor with layered structure. It has proven to be a promising high thermal velocity ballistic semiconductor, serving as a potential replacement for silicon. Our Bi2O2Se solutions are meticulously...

Bi2O2Te is a vdW layered material belonging to Bismuth oxychalcogenide material systems. It crystallizes in I4/mmm which is commonly known as anti-ThCr2Si2 structure.  The crystal structure of Bi2O2Te consists of [Bi2O2]2+ layers and Te2-...