Ga2O3 - Layered

SKU:
BLK-Ga2O3
Condition:
New
$810.00
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Description

The properties of layered Ga2O3 crystals

Beta phase Ga2O3 is a layered ultraviolet semiconducting material with band gap ranging from 3-3.5eV. Owing to their recent discovery, their electronic, optical, and magnetic properties remain largely unexplored. 

Sample size ~cm sized crystals 
Material properties ultraviolet semiconductor, luminescent
Crystal structure Beta layered phase
Degree of exfoliation Medium exfoliation characteristics
Production method Flux growth 
Other characteristics
  • Guaranteed semiconducting response
  • Sealed under vacuum compensated with Argon

 

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Additional Information

Elements:
Ga,O
Element:
Gallium
Element:
Oxygen
Formula:
Ga2O3
Material class:
M2X3
Material class:
Oxide
Properties:
Semiconductor
Band gap range:
VIS
Band gap range:
UV
Growth method:
Flux
Doping:
Undoped
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