Description
The properties of layered Ga2O3 crystals
Beta phase Ga2O3 is a layered ultraviolet semiconducting material with band gap ranging from 4.6-4.9eV. Owing to their recent discovery, their electronic, optical, and magnetic properties remain largely unexplored.
| Sample size | ~cm sized crystals |
| Material properties | ultraviolet semiconductor, luminescent |
| Crystal structure | Beta layered phase |
| Degree of exfoliation | Medium exfoliation characteristics |
| Production method | Flux growth |
| Other characteristics |
|
Additional Information
Elements: |
Ga,O |
Element: |
Gallium |
Element: |
Oxygen |
Formula: |
Ga2O3 |
Material class: |
M2X3 |
Material class: |
Oxide |
Properties: |
Semiconductor |
Band gap range: |
VIS |
Band gap range: |
UV |
Growth method: |
Flux |
Doping: |
Undoped |
