Description
Nb2SiTe4 is a layered narrow gap semiconductor. It crystallizes in monoclinic phase (P121/c1) wherein Nb and Si cations are sandwiched between Te anion atoms forming the individual layers. Nb2SiTe4 crystals are all perfectly layered and easy to exfoliate much similar to MoS2 and Bi2Te3 crystals. Overall it exhibits 0.4 eV optical band gap which has important applications towards mind-infrared and infrared technologies. Our Nb2SiTe4 crystals have been synthesized through chemical vapor transport (CVT) technique at high purity limits (99.9995% or higher) to ensure crystals are environmentally stable and optical/electronic grade. Each order comes with couple mm sized crystals as shown in the product images.
The properties of Nb2SiTe4 vdW crystals
| Sample size | couple few mm sized crystals |
| Material properties | Narrow gap semiconductor |
| Crystal structure | monoclinic phase |
| Unit cell parameters | a=0.63 nm b=0.69 nm c= 1.47 nm α=90° β=107° γ=90° |
| Production method | Chemical vapor transport 99.9995% purity |
| Characterization methods | SIMS, XRD, EDS, Raman |
Additional Information
Elements: |
Nb,Si,Te |
Element: |
Niobium |
Element: |
Silicon |
Element: |
Tellurium |
Formula: |
Nb2SiTe4 |
Properties: |
Semiconductor |
Properties: |
Topological |
Band gap range: |
IR |
Growth method: |
CVT |
Doping: |
Undoped |
