Description
We offer the largest size Bridgman grown As2S3 crystals in the world at unmatched quality. As2S3 comes in perfect 2:3 stoichiometry, large single crystal domain size, minimal defect density, and perfected purity level (99.9998%) are achieved. In the bulk form, arsenic sulfide (As2S3) is a direct gap semiconductor and has band-gap at around 2.5 eV. Similar to molybdenum disulfide, it has layered structure (lamellar) with weak interlayer coupling and can be isolated down to monolayers. As2S3 comes ready for exfoliation and is ideal for 2D research.
Properties of As2S3 crystals
Space group: P21/c
Layered: Yes / Exfoliates to monolayers
Band gap: ~2.2 eV in bulk
Purity: Semiconductor grade (6N) 99.9999%
Growth technique: Bridgman-Stockbarger
Sample size: ~1 cm
Raman spectrum of As2S3 crystals
Photoluminescence spectrum of As2S3
Additional Information
Elements: |
As,S |
Element: |
Arsenic |
Element: |
Sulfur |
Formula: |
As2S3 |
Material class: |
M2X3 |
Material class: |
Arsenide |
Properties: |
Semiconductor |
Band gap range: |
VIS |
Growth method: |
Bridgman |
Doping: |
Undoped |
