Description
As2Te3 single crystals are crystallized in the α phase and belongs to monoclinic C2/m space group. As2Te3 crystals exhibit topological insulator and thermoelectric behavior, in the bulk it is a narrow gap semiconductor with ~0.24 eV band gap. As2Te3 crystals have been synthesized at our facilities starting from the powder making process to the crystallization step in the USA. As2Te3 has been synthesized using flux zone technique to produce defect free, single crystal, and electronic quality topoligical and thermoelectric crystals. Each growth takes close to three months to provide you perfected crystals that does not contain any inpurities. Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate.
The properties of As2Te3 single crystals
| Crystal Size | ~1cm |
| Material properties | Topological insulator, thermoelectric semiconductor |
| Crystal structure | Monoclinic (α) phase |
| Unit cell perameters | a=1.433 nm, b=0.406 nm, c=0.989 nm, α=y=90°, β=95.43° |
| Growth method | Flux zone (no halide contamination) defect free. |
| Purity | 99.9999% confirmed |
Additional Information
Elements: |
As,Te |
Element: |
Arsenic |
Element: |
Tellurium |
Formula: |
As2Te3 |
Material class: |
M2X3 |
Material class: |
Arsenide |
Properties: |
Semiconductor |
Properties: |
Topological |
Properties: |
Phase change |
Band gap range: |
IR |
Growth method: |
Flux |
Doping: |
Undoped |
