Description
Bi2O2Se is a new high mobility IR semiconductor with layered structure. It has proven to be a promising high thermal velocity ballistic semiconductor, serving as a potential replacement for silicon. Our Bi2O2Se solutions are meticulously manufactured, commencing with high-quality Bi2O2Se van der Waals crystals to ensure a robust semiconducting response.
Each solution undergoes processing using a semiconductor-grade, high-purity solution of your choice. Every order includes supersaturated Bi2O2Se, allowing the solution to be easily increased in volume at your laboratory by simply adding the solution. The solution is as user-friendly as a straightforward drop-cast process.
Properties of Bi2O2Se single crystals
| Solution type | Isopropanol, ethanol, DI, or custom |
| Material properties | High mobility semiconductor |
| Crystal structure | Layered phase |
| Degree of exfoliation | Easy exfoliation characteristics |
| Production method | Flux growth |
| Other characteristics |
|
XRD collected from Bi2O2Se single crystals by 2Dsemiconductors USA
Raman spectrum of Bi2O2Se single crystals by 2Dsemiconductors USA
Additional Information
Elements: |
Bi,O,Se |
Element: |
Bismuth |
Element: |
Oxygen |
Element: |
Selenium |
Formula: |
Bi2O2Se |
Material class: |
M2X3 |
Material class: |
Oxide |
Properties: |
Semiconductor |
Properties: |
High mobility |
Band gap range: |
IR |
Growth method: |
Solution Phase |
Doping: |
Undoped |
Solution Type: |
Isopropanol |
Solution Type: |
Ethanol |
Solution Type: |
DI Water |
Solution Type: |
NMP |
Solution Type: |
Custom |
