CVD/MBE

Monolayer graphene and hBN transferred on SiO2/Si substrates. Full area graphene and hBN layers were synthesized first using our established CVD growth method (see below) on copper foils and transferred from copper onto SiO2/Si using copper etchant and...

World's first molecular beam epitaxy (MBE) grown MoS2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or...

World's first molecular beam epitaxy (MBE) grown MoSe2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or...

World's first molecular beam epitaxy (MBE) grown WS2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or metal-organic...

World's first molecular beam epitaxy (MBE) grown WSe2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or...