GaSTe Crystal

SKU:
BLK-GaSTe
Condition:
New
  • GaSTe Crystal
  • GaSTe Crystal
$520.00
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Description

GaSTe crystals crystallize in hexagonal phase and exhibit 1.5 eV band gap in bulk and physical properties of GaSTe crystals as well as monolayers remain entirely unknown in the literature. Existing GaSTe crystals are first in the literature as well as commercial market. These GaSTe (Gallium sulfide telluride) crystals measure up to 1 cm in size and have been developed at our facilities through chemical vapor transport (CVT) technique at 99.995% purity.
 

Properties of monoclinic GaSTe vdW crystals 

Sample size ~6mm-10mm in size
Electrical properties Semiconductor (1.5eV)
Crystal structure Hexagonal Phase
Growth method Chemical vapor transport
Characterization methods Raman, photoluminescence, TEM, EDS
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Additional Information

Elements:
Ga,S,Te
Element:
Gallium
Element:
Sulfur
Element:
Tellurium
Formula:
GaSTe
Material class:
MX
Material class:
Alloy
Properties:
Semiconductor
Band gap range:
IR
Band gap range:
VIS
Growth method:
CVT
Doping:
Undoped
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