Description
Our h-BN crystals are considered as gold standard in 2D materials field. Each package contains 5-10 crystals measuring 0.5mm to 1.5mm in size.
Available growth methods
High-pressure h-BN growth: High pressure growth produces lowest defect density h-BN crystals in the commercial market as low as 1E8cm-2. Highest purity 99.9999% in the field. It has clean cadhodoluminescence signal, and sharp Raman peaks (FWHM below 5.0 cm-1). This method takes place high pressures (exceeding 10 GPa pressure), under vacuum environment using Ba/Be-BN solution growth develop at our facilities. This technique produces lowest defect concentrations (1E8-1E10 cm-2) and oxide free h-BN crystals with clear cadhodoluminescence spectrum. Each package contains 5-10 crystals measuring 0.5mm to 1.5mm in size.
Atmospheric pressure h-BN growth: This method produces crystals with defect concentrations around 1E9-1E10cm-2 and is ideal for heterojunction production. Sizes reach up to 2mm in size and are slightly thicker compared to high-pressure grown h-BN. This method takes place at atmospheric pressures (hence this method is commonly referred as 'atmospheric growth' and involves our special metal alloy solution recipe to precipitate and grow h-BN crystals. This method produces electronic grade h-BN ideal for heterolayer fabrication but lacks clear cadhodoluminescence signal. All these crystals are grown at high pressures at temperatures exceeding 1600C using highly specialized cubit anvil cells, boron nitride enclaves, and diamond press units. Each package contains 5-10 crystals measuring 0.5mm to 1.5mm in size.
XRD data collected from h-BN crystals
TEM data collected from h-BN monolayers on TEM grids
Raman spectrum of h-BN crystals
Cadhodoluminescence signal from our h-BN crystals
Partial List of Publications Using This Product
C. Ciano et.al. Observation of phonon-polaritons in thin flakes of hexagonal boron nitride on gold; Appl. Phys. Lett. 112, 153101 (2018)
R. Schuster et.al. "Direct observation of the lowest indirect exciton state in the bulk of hexagonal boron nitride" Phys. Rev. B 97, 041201(R) (2018)
J. Ye et.al. "Nonlinear dynamics of trions under strong optical excitation in monolayer MoSe2" Nature Scientific Reports, 8, 2389 (2018)
G. Shepard et.al. "Nanobubble induced formation of quantum emitters in monolayer semiconductors" 2Dmaterials Accepted Manuscript
N. Mishra et.al. "Rapid and catalyst-free van der Waals epitaxy of graphene on hexagonal boron nitride" http://dx.doi.org/10.1016/j.carbon.2015.09.100
A. P. Nayak et. al. "Pressure-Modulated Conductivity, carrier Density, and Mobility of Multilayered Tungsten Disulfide" ACS Nano 10.1021/acsnano.5b03295
Direct observation of the lowest indirect exciton state in the bulk of hexagonal boron nitride; R. Schuster, C. Habenicht, M. Ahmad, M. Knupfer, and B. Büchner Phys. Rev. B 97, 041201(R) 2018
C. Ciano et.al. Observation of phonon-polaritons in thin flakes of hexagonal boron nitride on gold Appl. Phys. Lett. 112, 153101 (2018)
Additional Information
Elements: |
B,N |
Element: |
Boron |
Element: |
Nitrogen |
Formula: |
BN |
Material class: |
Nitride |
Properties: |
Insulator |
Properties: |
Excitonic |
Band gap range: |
UV |
Growth method: |
Atmospheric pressure |
Doping: |
Undoped |
Growth method: |
High pressure |
