Description
InSeBr (Indium selenide bromide) is a ternary alloy layered semiconductor with an optical band gap of 2.1 eV in the bulk limit. It is one of the newest member of 2D semiconductor family and its' optical, electronic, or magnetic properties remain largely unknown. Based on our optical absorption spectroscopy datasets, its optical gap is at 2.1 eV and exhibits p-type electronic behavior. Selective area electron diffraction (SAED) datasets show it crystallize in monoclinic (P21/c) with lattice parameters a=0.71 nm, b=0.75nm, and c=0.83nm; b=~118.2 degrees.
The properties of InSeBr crystals by 2Dsemiconductors
| Crystal size | ~3-6mm in size (note: crystals are not large in size due to reduced growth speeds) |
| Alloying | In:Se:Br→1:1:1 (equal stoichiometry) |
| Properties | 2.1 eV semiconductor (anisotropic) |
| Crystal structure | Monoclinic phase |
| Unit cell parameters | a=0.71 nm, b=0.75 nm, c=0.83 nm; β=~118.2 |
| Purity | 99.9999% confirmed |
Additional Information
Elements: |
In,Se,Br |
Element: |
Indium |
Element: |
Selenium |
Element: |
Bromine |
Formula: |
InSeBr |
Material class: |
MX(Ha) |
Properties: |
Semiconductor |
Band gap range: |
Unknown |
Growth method: |
Flux |
Doping: |
Undoped |
