Description
PbBi2Te4 is a layered topological insulator with the observed two-dimensional iso-energy contours in the bulk energy gap are found to be the largest among the known 3D topological insulators. Both bulk and monolayer regime physical properties of this material still remains largely unexplored. These PbBi2Te4 crystals were synthesized using Bridgman growth technique at 99.9999% or above level to ensure the highest electronic response. Typical crystals measure 1cm in size and are ready for advanced characterization and exfoliation purposes.
The properties of PbBi2Te4 vdW crystals
| Sample size | cm sized crystals |
| Material properties | Topological insulator |
| Crystal structure | Layered phase |
| Degree of exfoliation | Easy to exfoliate |
| Production method | Multi-step Bridgman process |
| Other characteristics |
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Additional Information
Elements: |
Pb,Bi,Te |
Element: |
Lead |
Element: |
Bismuth |
Element: |
Tellurium |
Formula: |
PbBi2Te4 |
Material class: |
M3X4 |
Material class: |
Telluride |
Properties: |
Topological |
Growth method: |
Bridgman |
Doping: |
Undoped |
