Description
Ta2NiSe5 is a semimetal with exciton insulator transition at ~330K. Excitonic insulators are novel material systems exhibiting correlated electronic phases. Condensation of excitons to its ground state happens for a specific condition when the exciton binding energy (Eb) is larger than the band gap (Eg). The excitonic condensation in semiconductors occurs through a Bose-Einstein condensation process, while the condensation in semimetals occurs through the Bardeen-Cooper-Schrieffer (BCS) process. The spontaneous band hybridization caused by the Coulomb attraction between the orthogonal conduction (electron) and valence (hole) bands opens the bandgap and drives the system into the insulating state
Properties of Ta2NiSe5 crystals
| Crystal size | Needle form <1cm |
| Material properites | Semimetal, excitonic insulator (E₉<50 meV) |
| Crystal structure | Cmcm No° 63 |
| Unit cell parameters | a=0.351, b=0.703 nm, c=1.578 nm; α=89.9°, β=89.7°, γ=75.54° |
| Growth method | Default: Flux zone growth (highest grade) Alternative: Chemical vapor transport CVT (lower grade) |
| Purity | 99.9999% confirmed |
Atomic structure of Ta2NiSe5 crystals
Additional Information
Elements: |
Ta,Ni,Se |
Element: |
Tantalum |
Element: |
Nickel |
Element: |
Selenium |
Formula: |
Ta2NiSe5 |
Material class: |
M2YX5 |
Material class: |
Quasi-1D |
Properties: |
Semimetal |
Properties: |
Excitonic Insulator |
Band gap range: |
IR |
Growth method: |
Flux |
Growth method: |
CVT |
Doping: |
Undoped |
