Description
Thallium Antimony Telluride (TlSbTe2) is a layered narrow-bandgap semiconductor, widely studied for its thermoelectric properties and potential in energy conversion devices. Its layered structure makes it suitable for exfoliation and investigation of two-dimensional properties.
Properties of TlSbTe2 Crystals
| Property | Details |
|---|---|
| Crystal Size | ~up to 1 cm in size |
| Material Properties | Narrow-gap Semiconductor, ~0.3 eV - 0.4 eV bandgap |
| Crystal Structure | Tetragonal, I4/mcm, a ≈ 6.48 Å; c ≈ 12.7 Å |
| Growth Method | Flux zone growth |
| Purity | 99.9999% confirmed |
Additional Information
Elements: |
Tl,Sb,Se |
Element: |
Thallium |
Element: |
Antimony |
Element: |
Selenium |
Formula: |
TlSbSe2 |
Material class: |
MX |
Material class: |
Alloy |
Properties: |
Topological |
Growth method: |
Bridgman |
Doping: |
Undoped |
