Description
Bi2TeO2 is a vdW layered material belonging to Bismuth oxychalcogenide material systems. It crystallizes in I4/mmm which is commonly known as anti-ThCr2Si2 structure. The crystal structure of Bi2O2Te consists of [Bi2O2]2+ layers and Te2- square net layers alternately stacked along the c-axis. It exhibits an electronic band gap of 0.23 eV. While Bi2TeO2 has rather large thermoelectric efficiency, its quantum properties mainly remain unknown.
The properties of Bi2TeO2 crystals
| Crystal | High quality Bi2TeO2 vdW crystals |
| Material properties | Thermoelectric material |
| Crystal structure | anti-ThCr2Si2 vdW structure |
| Unit cell parameters | 14/mmm a=3.9802 Å; c=1.2704 nm |
| Growth method | Flux zone growth |
| Purity | 99.9998% confirmed |
The crystal structure of Bi2TeO2 crystals
XRD collected from Bi2TeO2 crystals
Additional Information
Elements: |
Bi,Te,O |
Element: |
Bismuth |
Element: |
Tellurium |
Element: |
Oxygen |
Formula: |
Bi2TeO2 |
Material class: |
M2X3 |
Material class: |
Oxide |
Properties: |
Semiconductor |
Properties: |
High mobility |
Band gap range: |
IR |
Band gap range: |
VIS |
Growth method: |
Flux |
Doping: |
Undoped |
