Description
The only magnetic grade CrGeTe3 vdW crystals in the commercial market. Our customers knows that slim amount of defects and magnetic impurities are sufficient to mask the observation of exotic magnetic behavior from 2D magnets. Our vdW magnets are created using state-of-the-art techniques to provide highest magnetic quality crystals through slow but high quality self-flux technique without using any contaminating transport agents.
Cr2Ge2Te6 is a layered ferromagnetic semiconductor which is close to 2D Heisenberg ferromagnet with Curie temperature (Tc) values at 65K in bulk. It exhibits layered dependent Curie temperature, coercive fields, and magnetic properties. Our Cr2Ge2Te6 crystals are grown by flux-zone or chemical vapor transport techniques with 99.9999% confirmed purity and defect free nature. It comes with guaranteed ferromagnetic response and highest purity as well as crystallinity. All these products are handled using non-magnetic tweezers and in non-magnetic environment with tools that are free of magnetic impurities to ensure intrinsic magnetic properties can be confidently measured and probed.
Properties of Cr2Ge2Te6 vdW ferromagnetic crystals
| Crystal size | ~few mm in size |
| Material properties | 2D Heisenberg ferromagnet, semiconductor |
| Crystal structure | Hexagonal phase |
| Unit cell parameters | a=b=6.82 A°, c=20.56 A°, α=β=90° γ=120° |
| Purity | 99.9999% confirmed |
| Growth method | [Default] Flux zone (no halide contamination) defect free [Optional CVT]: Contains Br2, Cl2, TeCl4, and other halides |
Magnetic properties of Cr2Ge2Te6 crystals
XRD data collected from Cr2Ge2Te6 crystals
Raman spectrum of Cr2Ge2Te6 crystals
Additional Information
Elements: |
Cr,Ge,Te |
Element: |
Germanium |
Element: |
Tellurium |
Formula: |
Cr2Ge2Te6 |
Material class: |
M2X3 |
Properties: |
Semiconductor |
Properties: |
Magnet |
Band gap range: |
VIS |
Growth method: |
Flux |
Growth method: |
CVT |
Doping: |
Undoped |