Description
The only magnetic grade CrPS4 vdW crystals in the commercial market. Our customers knows that slim amount of defects and magnetic impurities are sufficient to mask the observation of exotic magnetic behavior from 2D magnets. Our vdW magnets are created using state-of-the-art techniques to provide highest magnetic quality crystals through slow but high quality self-flux technique without using any contaminating transport agents.
Chromium thiophosphate (CrPS4) is a promising semiconducting material with unique magnetic properties. It exhibits 1.35 eV optical band gap and has a Neel temperature of 35-40 K in its bulk vdW crystal form. Recent theoretical studies show that CrPS4 exhibits A-type antiferromagnetism which means magnetic behavior can alternate from ferromagnetism to antiferromagnetism for odd- and even-numbered layers.
Crystal growth technique and elimination of magnetic impurities. How can one ensure the measured magnetic signal is not coming from impurities in vdW crystals? More specifically magnetic Fe, Co, Ni impurity atoms or their oxides commonly appear in vdW crystals in no care is taken. Our CrPS4 crystals are grown by flux zone growth technique which does not use any transporting agent and does not contaminate the crystal these impurities. Special care is given to using highest purity precursors that are free of magnetic transition metal series and their oxides . This allows us to synthesize 99.9995% purity CrPS4 magnetic vdW crystals and access their magnetic behavior without any concern over magnetic impurity contribution. The crystal size is outlined in the images above.We note that this material is very hard to synthesize and stabilize in 1:1:3 stoichiometry. For that reason, each order contains one crystal that measures ~3-4 mm in size which is sufficient for 6 months exfoliation for an experienced user.
The characteristics of CrPS4 vdW crystals
Sample size | see image above (~3-5mm in size) |
Properties | Magnetic semiconductor (~1.4 eV band gap) |
Crystal structure | Monoclinic phase |
Unit cell parameters | a=10.87Å, b=7.25Å, c=6.15Å, β=91.88° |
Growth technique | Flux zone growth |
Purity | 99,9995% purity SIMS confirmed |
Production method | XRD, PL, TEM, SEM |
Environmental stability | Stable |
Additional Information
Elements: |
Cr,P,S |
Element: |
Chromium |
Element: |
Phosphorus |
Element: |
Sulfur |
Formula: |
CrPS4 |
Material class: |
MPX4 |
Properties: |
Semiconductor |
Properties: |
Magnet |
Band gap range: |
VIS |
Growth method: |
Flux |
Doping: |
Undoped |