Description
The only commercially available GaSSe alloys: Bulk Gallium sulfide selenide alloys exhibit band gaps ranging from 2.0 eV (GaSe) t0 2.6 eV (GaS) mostly covering the UV band gap ranges. Crystals are perfectly layered in the c-axis direction, comes ready for exfoliation, and crystals have an impressive environmental stability. Single crystal GaSeTe comes ready for exfoliation and is ideal for 2D research. GaSeTe alloys only come at ~50% (GaSe0.5Te0.5) alloying ratio due to phase separation phenomena taking place at other compositions.
Properties of GaSSe vdW crystals
| Crystal size | >1 cm in size and perfectly 0001 oriented |
| Material properties | 2.0 eV to 2.6 eV mostly direct gap semiconductor (bulk) |
| Crystal structure | Hexagonal phase |
| Purity | Better than 99.9999% confirmed |
| Growth method | Bridgmann Growth [Optional CVT or Flux zone growth also available] |
Photoluminescence and Raman spectrum collected from GaSSe alloys
Additional Information
Elements: |
Ga,S,Se |
Element: |
Gallium |
Element: |
Sulfur |
Element: |
Selenium |
Formula: |
GaSSe |
Material class: |
MX |
Material class: |
Alloy |
Properties: |
Semiconductor |
Band gap range: |
VIS |
Growth method: |
Bridgman |
Growth method: |
Flux |
Growth method: |
CVT |
Doping: |
Undoped |
