Description
The only commercially available GaSeTe alloys: Bulk Gallium selenide telluride has a band-gap at 1.89 eV and display strong photoluminescence at the same energy. Crystals are perfectly layered in the c-axis direction, comes ready for exfoliation, and crystals have an impressive environmental stability. Single crystal GaSeTe comes ready for exfoliation and is ideal for 2D research. GaSeTe alloys only come at ~50% (GaSe0.5Te0.5) alloying ratio due to phase separation phenomena taking place at other compositions.
Properties of GaSeTe vdW crystals
| Crystal size | > 1 cm in size and perfectly 0001 oriented |
| Material properties | 1.89 eV direct gap semiconductor (bulk) |
| Crystal structure | Hexagonal phase |
| Purity | Better than 99.9999% confirmed |
| Growth method | Bridgmann Growth [Optional CVT or Flux zone growth also available] |
Photoluminescence and Raman spectrum collected from GaSeTe alloys
Additional Information
Elements: |
Ga,Se,Te |
Element: |
Gallium |
Element: |
Selenium |
Element: |
Tellurium |
Formula: |
GaSeTe |
Material class: |
MX |
Material class: |
Alloy |
Material class: |
Quasi-1D |
Properties: |
Semiconductor |
Band gap range: |
VIS |
Band gap range: |
IR |
Growth method: |
Bridgman |
Growth method: |
Flux |
Growth method: |
CVT |
Doping: |
Undoped |
