Description
GeSb2Te4 is a layered chalcogenide phase change material that crystallizes in a trigonal layered structure with easy exfoliation, making it ideal for 2D material research and device prototyping. It hosts topologically nontrivial Dirac electrons in its crystalline state, effectively a three‑dimensional analogue of graphene, which supports high-speed electronic transport, surface conduction typical of topological insulators, and sharp metal‑to‑insulator transitions. This combination of properties positions GeSb2Te4 as a promising platform for next‑generation memory, switching electronics, thermoelectric devices, and topological studies.
The properties of GeSb2Te4 crystals
| Property | Details |
|---|---|
| Sample Size | Centimeter‑sized single crystals |
| Material Properties | Layered phase change material, topologically nontrivial Dirac electronic states, tunable thermal and electrical responses |
| Crystal Structure | Trigonal layered structure |
| Degree of Exfoliation | Easy, highly suitable for 2D material layers, device fabrication and surface‑sensitive studies |
| Production Method | Flux zone growth, precision‑controlled multi‑week process |
| Purity | High purity, optimized to minimize vacancies and interlayer disorder |
| Other Characteristics | Exhibits sharp phase change, surface conduction as in topological insulators, fast switching, and excellent potential for electronic/thermoelectric applications |
Additional Information
Elements: |
Ge,Sb,Te |
Element: |
Germanium |
Element: |
Antimony |
Element: |
Tellurium |
Formula: |
GeSb2Te4 |
Material class: |
Tellurides |
Properties: |
Topological |
Properties: |
Phase change |
