In2Se3 Crystal

SKU:
BLK-In2Se3-BGM
Condition:
New
  • In2Se3 Bridgman grown crystals - Highest grade. Perfect exfoliation
  • In2Se3 Bridgman grown crystals - Highest grade. Perfect exfoliation
  • In2Se3 crystals - exfoliated
  • In2Se3 crystals - CVT grown crystals
  • XRD data from In2Se3 crystals - High quality In2Se3 crystals - 2Dsemiconductors USA
$620.00
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Description

We provide the world's largest size commercially available In2Se3 crystals at the highest quality In2Se3 and affordable prices. Our crystals exceed competing crystals both in size and quality.

In2Se3 crystals now available in Bridgman grown (highest quality) and chemical vapor transport (lower grade) options

Description

In2Se3 single crystals were grown using Bridgman or chemical vapor transport (CVT) techniques. These crystals are largest in the commercial market with high attention given to having best electronic and optical quality. Unlike other In2Se3, the phase of this product is controlled carefully by after meticulous synthesis refinement steps and the flakes are highly crystalline. Flakes are perfectly layered, in-plane sheets are perfectly aligned in the (002) direction as determined by XRD and 4-angle XRD (rocking curves). In the bulk, the crystals display 1.41 eV band gap and show strong Raman peaks. 

Properties of In2Se3 layered crystals

Material properties Semiconducting
Crystal structure Hexagonal
Unit cell parameters a=b=0.34 nm, c=18.84 nm; α=β=90°, γ=120°
Growth method Fload zone technique
Purity 99.9999% guaranteed
Characterization XRD, XPS, AES, SIM, and HRTEM

 

 XRD spectrum from In2Se3 layered crystals

in2se3-xrd.png

 

Recent work citing our crystal

An optoelectronic synapse based on α-In2Se3 with controllable temporal dynamics for multimode and multiscale reservoir computing
Nature Electronics, 5, 761–773 (2022)

Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions featured
Journal of Applied Physics 132, 054101 (2022)

Understanding Microscopic Operating Mechanisms of a van der Waals Planar Ferroelectric Memristor
Advanced Functional Materials 2021
https://doi.org/10.1002/adfm.202009999

 

 

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Additional Information

Elements:
In,Se
Element:
Indium
Element:
Selenium
Formula:
In2Se3
Material class:
M2X3
Properties:
Semiconductor
Band gap range:
IR
Band gap range:
VIS
Growth method:
Float zone
Doping:
Undoped
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