Description
We ofer the world's only commercially available InGaSe2 crystals. InGaSe2 is an infrared (IR) grade semiconductor with vdW layered structure. Theoretical studies suggest narrow (0.5 eV) bandgap value while the experimental investigations still remain limited to date. Our InGaSe2 vdW crystals were synthesized using flux technique at 99.999% or higher purity values. The materials are highly crystallized and exhibit high optical and electronic performance.
The properties of InGaSe2 vdW crystals
| Sample size | Single or multiple pieces adding to ~0.6cm |
| Material properties | IR semiconductors |
| Crystal structure | Tetragonal vdW I4/mcm structure |
| Degree of exfoliation | Easy to exfoliate |
| Production method | Multi-step Bridgman and oxygen compensation process |
| Other characteristics |
|
Additional Information
Elements: |
In,Ga,Se |
Element: |
Indium |
Element: |
Gallium |
Element: |
Selenium |
Formula: |
InGaSe2 |
Material class: |
MX |
Properties: |
Semiconductor |
Band gap range: |
VIS |
Growth method: |
Bridgman |
Doping: |
Undoped |
