Description
InGaSe2 is a new infrared (IR) grade semiconductor with vdW layered structure. Theoretical studies suggest narrow (0.5 eV) bandgap value while the experimental investigations still remain limited to date. Our InGaSe2 vdW crystals were synthesized using chemical vapor transport technique (CVT) at 99.999% or higher purity values. The materials are highly crystallized and exhibit high optical and electronic performance. Typical crystals measure 4-6mm in size.
The properties of InGaSe2 vdW crystals
| Sample size | Nearly 0.5cm in size or a few pieces adding to cm |
| Material properties | IR semiconductors |
| Crystal structure | Tetragonal vdW I4/mcm structure |
| Degree of exfoliation | Easy to exfoliate |
| Production method | Multi-step Bridgman and oxygen compensation process |
| Other characteristics |
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Additional Information
Elements: |
In,Ga,Se |
Element: |
Indium |
Element: |
Gallium |
Element: |
Selenium |
Formula: |
InGaSe2 |
Material class: |
MX |
Properties: |
Semiconductor |
Band gap range: |
VIS |
Growth method: |
Bridgman |
Doping: |
Undoped |
