Description
The only commercially available layered InTe crystals. In the bulk form (InTe), Indium Telluride, has band-gap at around 0.6 eV and display strong photoluminescence. Similar to molybdenum disulfide, it has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers. InTe crystals exhibit TlSe-like structural transformation and thus has 2D anisotropic response much similar to ReS2, WTe2, and TiS3. Each monolayer is four atoms thick (Te-In-In-Te) that is roughly 0.9-1.0 nm. In our facilities, we have isolated InTe down to monolayer. In the literature, monolayer InTe is currently under-studied, yet to be discovered. Raman peaks are sharp and strong indicating high crystallinity.
Our crystals are grown by state-of-the-art growth techniques after 5 weeks and show high crystallinity. The size of the samples is typically around ~4mm in size. InTe has a layered structure with weak interlayer coupling. Single crystal InTe comes ready for exfoliation and is ideal for 2D research.
Properties of InTe layered crystals - 2Dsemiconductors USA
| Crystal size | ~4 mm in size |
| Material properties | 2D anisotropic semiconductor ~0.7 eV direct gap |
| Crystal structure | Monoclinic |
| Growth method | Float zone technique |
| Purity | 99.9999% guaranteed |
| Characterization | XRD, XPS, AES, SIM, and HRTEM |
Additional Information
Elements: |
In,Te |
Element: |
Indium |
Element: |
Tellurium |
Formula: |
InTe |
Material class: |
MX |
Material class: |
Quasi-1D |
Properties: |
Semiconductor |
Properties: |
High mobility |
Band gap range: |
IR |
Growth method: |
Float zone |
Doping: |
Undoped |
