Description
PbTe crystallizes in the NaCl crystal structure with Pb atoms occupying the cation and Te forming the anionic lattice. It is a narrow gap semiconductor with a band gap of 0.32 eV. PbTe crystals are single crystalline grown by Bridgman technique to ensure high structural quality and thermoelectric and electronic performance.
The properties of PbTe crystals
| Sample size | Each order contains one a few mm sized PbTe crystal |
| Material properties | Thermoelectric, metallic |
| Crystal structure | NaCl structure |
| Degree of exfoliation | No exfoliation |
| Production method | High thermoelectric purity (6N or better) through Bridgman growth |
| Other characteristics |
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Additional Information
Elements: |
Pb,Te |
Element: |
Lead |
Element: |
Tellurium |
Formula: |
PbTe |
Material class: |
MX |
Properties: |
Semiconductor |
Properties: |
Thermoelectric |
Band gap range: |
IR |
Growth method: |
Bridgman |
Doping: |
Undoped |
