SnBi4Te7 Crystal

SKU:
BLK-SnBi4Te7
Condition:
New
$640.00
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Description

SnBi4Te7 is a layered van der Waals topological insulator and narrow gap semiconductor with easy exfoliation characteristics. It belong to the trigonal crystal system with alternating Sn-Bi-Te layers to make up SnBi4Te7 stoichiometry. SnBi4Te7 crystals are grown using Bridgman growth technique and come with guaranteed easy exfoliation characteristics, 6N or higher purity, and excellent electronic performance

The physical properties of SnBi4Te7

<td ">Topological InsulatorNarrow gap semiconductor (0.65 eV) [Calculated]Very easy to exfoliate

Sample size centimeter sized crystals
Properties
  • Topological Insulator
  • Narrow gap semiconductor (0.65 eV) [Calculated]
  • Very easy to exfoliate
Unit cell parameters a=b=0.439 nm and c=2.398 nm
Production method Bridgman growth technique

 

 

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Additional Information

Elements:
Sn,Bi,Te
Element:
Tin
Element:
Bismuth
Element:
Tellurium
Formula:
SnBi4Te7
Material class:
Alloy
Properties:
Topological
Growth method:
Bridgman
Doping:
Undoped
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