SnSe2 Crystal

  • SnSe2 crystals - Large 1 cm size high quality SnSe2 crystals - 2Dsemiconductors USA
  • Raman spectrum of SnSe2 crystals
  • SnSe2 crystals - Large 1 cm size high quality SnSe2 crystals - 2Dsemiconductors USA
  • SnSe2 Crystal
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We provide the world's largest size commercially available SnSe2 crystals at the highest quality SnSe2 and affordable prices. Our crystals exceed competing crystals both in size and quality.


World record size single crystal SnSe₂ (Tin diselenide) crystals are developed at our facilities using state-of-art techniques. All the crystals are ready to exfoliate as shown in the images. Crystals are larger than 1cm in size giving you plenty of material to work with. In the bulk form SnSe₂ is 1.0 eV direct band gap semiconductor and becomes 1.4 eV direct semiconductor in the monolayer form. Displays remarkable and unusual optical, mechanical, and electrical properties that are waiting to the published in the literature. Yet, monolayer SnSe₂ remains unknown by the scientific community and waiting to be discovered. Crystals are highly crystalline with very sharp Raman peak signal at 109 and 182 cm-1 with FWHM less than 4cm-1. They are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to three months to provide you perfected crystals that does not contain any halides. In contrast to commonly used chemical vapor transport (CVT) technique, flux grown crystals are well known for their structural perfection and electronic/optical performance. Each crystal very large in size to last for years, is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. 

Characteristics of SnSe2 crystals

Crystal size ~1 cm
Unit cell perameters a=b=0.380, c=0.618 nm; α=β=90°, γ=120°
Material properties Semiconducting
Crystal structure Hexagonal phase
Growth method [Default] Flux zone (no halide contamination) defect free
[Optional CVT]: Contains Br2, Cl2, TeCl4, and other halides
Purity 99.9999% confirmed
Characterization XRD,XPS,AES,SIM, and HRTEM


Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 

Raman spectrum collected from SnSe2 vdW crystals


XRD data collected from SnSe2 vdW crystals


HRTEM Data taken from SnSe2 vdW Crystals


Recent work citing our crystals

Negative Differential Photoconductance as a Signature of Nonradiative Energy Transfer in van der Waals Heterojunction
ACS Nano 2021, 15, 10, 16432–16441



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Additional Information

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