ALL PRODUCTS

Multilayer gallium sulfide (GaS) layers have been deposited onto variety of substrates using our state-of-the-art atomic layer deposition (ALD) technique. GaS layers measure 100nm-1um in thickness. Our films are designed to achieve single crystalline...

Multilayer gallium selenide (GaSe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaSe thin films are directly deposited onto double side...

Multilayer gallium telluride (GaTe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaTe thin films are directly deposited onto double side...