Description
Multilayer gallium selenide (GaSe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaSe thin films are directly deposited onto double side polished c-cut sapphire substrates but can be transferred onto virtually any substrate choice. GaSe films measure 100s of nanometers in thickness and particularly ideal for thin film geometry measurements such as catalysis, photovoltaics, electronic transport, and others. GaSe films come with guaranteed PL, Raman, and semiconducting response.
Properties of GaSe thin films - 2Dsemiconductors USA
| Sample size | 1cm² substrate size and GaSe ~0.5cm² |
| Material properties | 2eV direct semiconductor |
| Crystal structure | Hexagonal |
| Unit cell parameters | a=0.376 nm, b=0.376 nm, c=1.596 nm; α=β=90°, γ=120° |
| Growth method | Atomic layer deposition (ALD) |
| Purity | Confirmed better than 99.9999% |
GaSe XRD datasets
Raman spectrum taken on GaSe sheets (532 nm excitation laser)
Additional Information
Elements: |
Ga,Se |
Element: |
Gallium |
Element: |
Selenium |
Formula: |
GaSe |
Material class: |
MX |
Properties: |
Semiconductor |
Properties: |
Luminescent |
Band gap range: |
VIS |
Growth method: |
ALD |
Doping: |
Undoped |
Thin-film type: |
Multilayer |
Substrate: |
SiO2/Si |
Substrate: |
Sapphire |
Substrate: |
Custom |
