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The only commercially available GaSeTe alloys: Bulk Gallium selenide telluride has a band-gap at 1.89 eV and display strong photoluminescence at the same energy. Crystals are perfectly layered in the c-axis direction, comes ready for exfoliation, and...

The only commercially available GaSSe alloys: Bulk Gallium sulfide selenide alloys exhibit band gaps ranging from 2.0 eV (GaSe) to 2.6 eV (GaS) mostly covering the UV band gap ranges. Crystals are perfectly layered in the c-axis direction, comes ready...

We provide the world's largest size commercially available GaTe crystals at the highest quality GaTe and at affordable prices. Our guaranteed crystals exceed competing crystals both in size and quality. Description Our single crystal monoclinic GaTe...

We provide the world's largest size commercially available GeSe crystals at the highest quality GeSe and affordable prices. World's only commercial high grade Bridgman GeSe crystals measure 0.6-1.2cm in size and exhibits clean cleavable surfaces. CVT...

We ofer the world's only commercially available InGaSe2 crystals. InGaSe2 is an infrared (IR) grade semiconductor with vdW layered structure. Theoretical studies suggest narrow (0.5 eV) bandgap value while the experimental investigations still remain...

See ballistic world record InSe FET mobility accomplished by our InSe crystals; "Ballistic two-dimensional InSe transistors" Nature, 616, 470–475 (2023) We guarantee the world's largest size commercially available InSe crystals at the...

InSnSe layered crystals have been synthesized through Bridgman growth technique by alloying Indium and Tin at 50%-50% ratios to create In0.5Sn0.5Se crystals. Our crystals retain 99.9999% purity and perfect layered characteristics. While SnSe and InSe...

We offer larger than 2.5cm size ultra high purity In2Se3 single crystals with exceptionally low defect density in the alpha phase. These crystals are exfoliation ready, highly uniform, oriented in 002 direction, and ideal for electronic, optical, and...

World's largest size highest quality MoO3 crystals a-MoO3 is a layered vdW semiconductor with a crystal structure that belongs to the space group Pbnm 62 (see unit cell parameters below). It is layered and as easy to exfoliate as MoS2 or graphite. In its...

The only commercially available lead iodide (PbI2) by 2Dsemiconductors USA. PbI2 crystallizes in a CdI2 structure, in which I- anions are packed hexagonally, and each Pb2+ cation is connected to six I- anions in alternating layers, forming a typical...

PbSb2Te4 is a topological material with exciting spintronic properties. These PbSb2Te4 crystals were synthesized using highest grade Bridgman technique at 99.99999% or above level to ensure the highest electronic response. Typical crystals measures...

PbTe crystallizes in the NaCl crystal structure with Pb atoms occupying the cation and Te forming the anionic lattice. It is a narrow gap semiconductor with a band gap of 0.32 eV. PbTe crystals are single crystalline grown by Bridgman technique to ensure...