Description
Germanium sulfide (GeS) is an innovative anisotropic semiconductor with a distinctive van der Waals (vdW) structure, detailed in our product description. GeS vdW crystals are synthesized via a chemical vapor transport method under high-pressure and high-temperature conditions, ensuring exceptional crystallinity and strong vdW integrity. These crystals, which reach approximately 1 cm in size, display a unique layered vdW configuration, forming a quasi-1D, anisotropic ribbon-like structure similar to ReS₂, ReSe₂, and TiS₃.
The characteristics of GeS vdW crystals
| Sample size | see image above (~1cm in size) |
| Properties | 2D semiconductor |
| Crystal structure | Monoclinic phase |
| Unit cell parameters |
a ≈ 4.30 Å b ≈ 10.48 Å c ≈ 3.65 Å Orthophombic Pnma no.62 |
| Growth technique | Chemical vapor transport (Bridgman available) |
| Purity | 99,9995% purity SIMS confirmed |
| Production method | SEM, EDS, Raman |
| Environmental stability | Stable |
Additional Information
Elements: |
Ge,S |
Element: |
Germanium |
Element: |
Sulfur |
Formula: |
GeS |
Material class: |
MX |
Properties: |
Semiconductor |
Band gap range: |
VIS |
Growth method: |
Flux |
Growth method: |
CVT |
Doping: |
Undoped |