Description
See ballistic world record InSe FET mobility accomplished by our InSe crystals; "Ballistic two-dimensional InSe transistors" Nature, 616, 470–475 (2023)
We provide the world's largest size commercially available InSe crystals at the highest quality InSe and affordable prices. Our crystals exceed competing crystals both in size and quality.
Description
Our single crystal gamma phase InSe crystals come with guaranteed optical, electronic, and structural quality. They are developed at our facilities using three different state-of-art techniques: i) Bridgman growth abd ii) chemical vapor transport (CVT) growth. The latter (CVT) produces contaminated samples around centimeters in size. Bridgman method offers superior crystallinity (recommended method). Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency.
The properties of InSe crystals
| Sample size | World's largest size crystals: ~1cm size |
| Material properties | 1.26 eV direct gap 2D semiconductor |
| Crystal structure | Gamma phase InSe crystal |
| Degree of exfoliation | Easy to exfoliate |
| Production method | Bridgman growth (recommended); 7N (99.99999%) purity, high crystallinity) Chemical vapor transport (CVT) - Optional' 5.5N (99.9995%) purity (uses I2 transport agent) |
| Other characteristics |
|
XRD dataset collected from bulk InSe crystals
Raman spectrum collected from bulk InSe crystals
Photoluminescence spectrum collected from bulk InSe crystals
Publications from this product
Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices
Nature Nanotechnology volume 16, pages882–887 (2021)
"Largely Tunable Band Structures of Few-Layer InSe by Uniaxial Strain" ACS Appl. Mater. Interfaces, 2018, 10 (4), pp 3994–4000
Additional Information
Elements: |
In,Se |
Element: |
Indium |
Element: |
Selenium |
Formula: |
InSe |
Material class: |
MX |
Properties: |
Semiconductor |
Properties: |
High mobility |
Band gap range: |
VIS |
Band gap range: |
IR |
Growth method: |
Bridgman |
Growth method: |
CVT |
Doping: |
Undoped |
