Description
InSnSe layered crystals have been synthesized through Bridgman growth technique by alloying Indium and Tin at 50%-50% ratios to create In0.5Sn0.5Se crystals. Our crystals retain 99.9999% purity and perfect layered characteristics. While SnSe and InSe parent materials have been studied in the literature their ternary alloys remain unexplored to date ready for cutting edge 2D materials research.
Additional Information
Elements: |
In,Sn,Se |
Element: |
Indium |
Element: |
Tin |
Element: |
Selenium |
Formula: |
InSnSe |
Material class: |
MX |
Material class: |
Alloy |
Properties: |
Semiconductor |
Band gap range: |
Unknown |
Growth method: |
Bridgman |
Doping: |
Undoped |
