Description
We provide world's largest size commercial high-purity Molybdenum Tungsten Ditelluride (MoxW(1-x)Te2) crystals with stoichiometric ratios of x = 0.3, 0.5, and 0.7, tailored for advanced research applications. These crystals are electronic-grade (99.9995% purity), defect-free, and exhibit perfect stoichiometry, ensuring exceptional performance for exfoliation and electronic applications.
Our crystals are grown using two methods:
- Flux Zone Growth: Delivers superior crystal quality with minimal defects.
- Chemical Vapor Transport (CVT): Offers faster production but with slightly higher defect concentrations.
Each crystal undergoes rigorous characterization, including XPS, SAED, and EDS measurements, to ensure precise alloying and valleytronic response.
Properties of MoxW(1-x)Te2 Crystals
| Parameter | Details |
|---|---|
| Available Compositions | x=0.5 in stock (x = other compositions available per request) |
| Sample Size | Larger than 1 cm (see images) |
| Crystal Purity | Electronic-grade (99.9995%) |
| Defect Density | Flux Zone: ~1E9–1E10 cm⁻²; CVT: ~1E11–1E12 cm⁻² |
| Crystal Structure | Uniform stoichiometric alloy with no phase separation |
| Exfoliation | Easy exfoliation, high monolayer yield |
| Growth Methods | Flux Zone (default, high quality) or CVT (faster production) |
| Characterization Methods | XPS, SAED, EDS, PL spectra, and XRD for quality assurance |
Additional Information
Elements: |
Mo,W,Te |
Element: |
Molybdenum |
Element: |
Tungsten |
Element: |
Tellurium |
Formula: |
MoWTe2 |
Material Class: |
MX2 |
Material Class: |
Dichalcogen |
Material Class: |
Alloy |
Properties: |
Semiconductor |
Properties: |
Excitonic |
Band Gap Range: |
IR |
Growth Method: |
Flux |
Growth Method: |
CVT |
Doping: |
Undoped |
