Description
The only commercially available lead iodide (PbI2) by 2Dsemiconductors USA. PbI2 crystallizes in a CdI2 structure, in which I- anions are packed hexagonally, and each Pb2+ cation is connected to six I- anions in alternating layers, forming a typical octahedral structure. The repeating I-Pb-I trilayer stacks in various ways and are bounded by van der Waals force, and this in return, offers a way to achieve mono- and few-layer flakes by mechanical and chemical exfoliation due to the weak interlayer forces between adjacent layers. PbI2 crystals are perfectly layered and has 2.4 eV direct band gap. Crystals arrive with perfect 0001 cleavage, and are grown by float zone technique over 4 months for perfect crystallization. PbI2 crystals are highly luminescent and arrive with guaranteed optical (photoluminescence) response.
Properties of PbI2 crystals - 2Dsemiconductors USA
| Sample size | ~1 cm in size |
| Material properties | ">2.4 eV band gap semiconductor (bulk) |
| Crystal structure | CdI2 structure |
| Unit cell parameters | a=b=0.456 nm and c=6.98 nm |
| Growth method | Bridgman growth; optional Flux zone or chemical vapor transport |
| Purity | 99.9999% guaranteed electronic grade |
| Characterization methods | Raman, photoluminescence, TEM, EDS |
| Availability | In stock |
XRD data collected from PbI2 single crystals - 2Dsemiconductors USA
Raman spectrum collected from PbI2 crystals - 2Dsemiconductors USA
PL spectrum collected from PbI2 layered crystals
Additional Information
Elements: |
Pb,I |
Element: |
Lead |
Element: |
Iodine |
Formula: |
PbI2 |
Material class: |
M(Ha)2 |
Material class: |
Dihalide |
Properties: |
Semiconductor |
Properties: |
Excitonic |
Band gap range: |
VIS |
Growth method: |
Bridgman |
Growth method: |
Flux |
Growth method: |
CVT |
Doping: |
Undoped |