Description
After more than five years of focused R&D, we are proud to introduce our Ultra-Flat Large-Area GaSe Crystals, engineered specifically for reliable large-area exfoliation, including advanced methods such as Au-assisted transfer. These synthetic crystals represent the highest-quality, largest-format GaSe available worldwide.
Produced using our flagship flux-growth process, each crystal exceeds ~2 cm in size and offers exceptional surface flatness, enabling clean exfoliation and uniform thickness control. Their outstanding structural quality makes them ideally suited for cutting-edge electronic, optoelectronic, nonlinear optical, and quantum-material research.
The physical properties of GaSe crystals
| Sample size | +2cm |
| Properties |
Direct gap semiconductor (2 eV direct gap semiconductor) |
| crystal structure and exfoliation | Hexagonal phase a=b=0.376 nm c=1.596 nm,α=β=90° γ=120° Very easy to exfoliate ideal for large area exfoliation |
| Production method | Default Bridgman growth technique |
Selected Publications on GaSe
Understanding and Mitigating the Degradation of Optical Emission from Exfoliated Ga₂Se₂
ACS Applied Optical Materials, 3(8), 1757–1765
DOI: 10.1021/acsaom.5c00195
Unconventional Bias-Dependent Tunneling Magnetoresistance in van der Waals Ferromagnetic/Semiconductor Heterojunctions
Nature Communications, 16, 9509
https://doi.org/10.1038/s41467-025-64551-3
A GaSe/Si-Based Vertical 2D/3D Heterojunction for High-Performance Self-Driven Photodetectors
Nanoscale Advances, 4, 479–490
Layer-Dependent Nonlinear Optical Properties and Stability of Non-Centrosymmetric Modification in Few-Layer GaSe Sheets
Angewandte Chemie
https://onlinelibrary.wiley.com/doi/epdf/10.1002/anie.201409837
Synthesis of Few-Layer GaSe Nanosheets for High-Performance Photodetectors
ACS Nano, 6(7), 5988–5994
Investigation of Thickness-Dependent Optical and Optoelectronic Properties of Mechanically Exfoliated GaSe Nanoflakes
ACS Applied Electronic Materials, 5(1), 451–460
DOI: 10.1021/acsaelm.2c01453
Large and Tunable Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions
Nature Communications, 14, 5371
https://doi.org/10.1038/s41467-023-41077-0
Resonance and Antiresonance in Raman Scattering in GaSe and InSe Crystals
Scientific Reports, 11, 924
https://doi.org/10.1038/s41598-020-79411-x
Additional Information
Elements: |
Ga,Se |
Element: |
Gallium |
Element: |
Selenium |
Formula: |
GaSe |
Material class: |
MX |
Properties: |
Semiconductor |
Band gap range: |
VIS |
Growth method: |
Bridgman |
Doping: |
Undoped |
