Premium Ultra-Flat MoS2 Synthetic Crystals

SKU:
BLK-MoS2-PREM
Condition:
New
  • Premium Ultra-Flat MoS2 Synthetic Crystals
  • Premium Ultra-Flat MoS2 Synthetic Crystals
  • Premium Ultra-Flat MoS2 Synthetic Crystals
  • Premium Ultra-Flat MoS2 Synthetic Crystals
  • Premium Ultra-Flat MoS2 Synthetic Crystals
  • Premium Ultra-Flat MoS2 Synthetic Crystals
  • Premium Ultra-Flat MoS2 Synthetic Crystals
$910.00
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Description

Limited Edition Ultra-Flat Large-Area MoS2 Crystals

After over five years of dedicated R&D, we are proud to offer our Ultra-Flat Large-Area MoS₂ Crystals—precision-engineered specifically for monolayer exfoliation techniques such as Au-assisted transfer. These synthetic crystals represent the highest quality and largest format MoS2 available globally.

Produced using our proprietary flagship flux growth method, each crystal measures approximately 3 cm and features unmatched surface flatness, making them ideal for advanced electronic, optical, and quantum applications.

Please note: availability is extremely limited due to the specialized synthesis process.

If your research needs 3R-MoS2 crystals, they can be found in the [link]

The properties of Ultra-Flat Large-Area MoS2 Crystals 

Sample size  Approximately 3cm in size
Material properties  Bulk 1.2 eV indirect and Excitonic semiconductor (~1.85 eV)
Crystal structure  2H semiconducting phase
Degree of exfoliation  Easy to exfoliate, ideal for large area exfoliation
Production method  Flux zone  
Other characteristics
  • High single crystal domain size
  • Low defect concentration
  • High carrier mobility
  • Confirmed 300K and cryogenic excitonic response

Photoluminescence spectrum from monolayer Premium MoS2 

Raman spectrum from monolayer Premium MoS2 crystals

XRD data collected from Premium MoS2 crystals

HRTEM of MoS2 monolayers

mos2-tem.jpg.png

 

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Additional Information

Elements:
Mo,S
Element:
Molybdenum
Element:
Sulfur
Formula:
MoS2
Material class:
MX2
Material class:
Dichalcogen
Properties:
Semiconductor
Properties:
Excitonic
Band gap range:
VIS
Growth method:
CVT
Doping:
Undoped
Doping:
p-Type
Doping:
n-Type
Growth method:
Flux
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