ReSe2 - Full Area Monolayer on c-cut Sapphire

SKU:
CVD-ReSe2-ML-SP
Condition:
New
  • ReSe2 - Full Area Monolayer on c-cut Sapphire
  • ReSe2 - Full Area Monolayer on c-cut Sapphire
  • ReSe2 - Full Area Monolayer on c-cut Sapphire
  • Transmission electron images (TEM) and angle resolved Raman spectroscopy measurements acquired from CVD grown full area coverage ReSe2 monolayers on c-cut sapphire confirming crystalline anisotropy
  • Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples. Differential reflectance measurements clearly show band gap at 1.45 eV for monolayer ReSe2 consistent with the existing literature values. PL spectrum does not show any PL signal due to indirect band nature.
$490.00
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Description

This product contains full area coverage ReSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick ReSe2 sheet. Synthesized full area coverage monolayer ReSe2 is highly crystalline, some regions also display significant crystalline anisotropy.

Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). 

Sample Properties

Sample size 1cm x 1cm square shaped
Substrate type Sapphire c-cut (0001)
Coverage Full monolayer coverage
Electrical properties 1.45 eV Anisotropic Semiconductor (Indirect Bandgap)
Crystal structure Distorted Tetragonal Phase (1T’)
Unit cell parameters a = 0.656 nm, b = 0.672 nm, c = 0.674 nm, α = 91.74°, β = 105°, γ = 119°
Production method Atmospheric Pressure Chemical Vapor Deposition (APCVD)
Characterization methods Raman, angle resolved Raman spectroscopy, photoluminescence, absorption spectroscopy TEM, EDS

 

Specification.

  • Identification. Full coverage 100% monolayer ReSe2 uniformly covered across c-cut sapphire
  • Physical dimensions. one centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.
  • Smoothness. Atomically smooth surface with roughness < 0.15 nm.
  • Uniformity. Highly uniform surface morphology. ReSe2 monolayers uniformly cover across the sample.
  • Purity. 99.9995% purity as determined by nano-SIMS measurements
  • Reliability. Repeatable Raman and photoluminescence response
  • Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.
  • Substrate. c-cut Sapphire but our research and development team can transfer ReSe2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.
  • Support. 2Dsemiconductors USA is an American owned, regulated, and operated company. Our customers are well-protected by international as well as strict American customer laws and regulations. We give full technical support and guarantee your satisfaction with our well-established customer
  • Defect profile. ReSe2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected ReSe2 using a-bombardment technique.
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Additional Information

Elements:
Re,Se
Element:
Rhenium
Element:
Selenium
Formula:
ReSe2
Material class:
MX2
Material class:
Dichalcogen
Material class:
Quasi-1D
Properties:
Semiconductor
Properties:
Excitonic
Band gap range:
VIS
Growth method:
CVD
Doping:
Undoped
Thin-film type:
Monolayer
Substrate:
Sapphire
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