Description
Chemical vapor deposited (CVD) Sb2Te3 films have been synthesized at our facilities in 2019. Bulk Sb2Te3 crystal is a topological insulator which crystallizes in an orthorhombic space group. CVD Sb2Te3 samples measure 1x1cm2 in size and reaches to full coverage. By default it is grown onto souble side polished sapphire, but can also be transferred to SiO2/Si substrates on demand.
The characteristics of CVD Sb2Te3
| Sample size | 1cm x 1cm square shaped |
| Substrate type | (0001) c-cut sapphire (Can be transferred onto any substrate) |
| Coverage | Full coverage |
| Electrical properties | Topological insulator (bulk form) |
| Crystal structure | Trigonal phase |
| Unit cell parameters | a=b=0.427 nm, c=3.052 nm, α=β=90°, γ=120° |
| Production method | Chemical vapor deposition |
| Characterization methods | Raman, photoluminescence, TEM, EDS |
XRD taken from Sb2Te3 crystals
Raman spectrum acquired from Sb2Te3 single crystals
Additional Information
Elements: |
Sb,Te |
Element: |
Antimony |
Element: |
Tellurium |
Formula: |
Sb2Te3 |
Material class: |
M2X3 |
Properties: |
Topological |
Properties: |
Metal |
Growth method: |
CVD |
Doping: |
Undoped |
Substrate: |
Sapphire |
