Description
Silicon Carbide (SiC) is a wide-bandgap semiconductor prized for its exceptional thermal conductivity, high electric field breakdown strength, and superior radiation hardness. Our SiC single crystals are grown using flux growth technique at high temperatures, delivering ultra-pure, defect-controlled materials for next-generation power devices, quantum components, and harsh-environment electronics.
Additional Information
Elements: |
Si, C |
Element: |
Silicon |
Element: |
Carbon |
Formula: |
SiC |
Material class: |
MX |
Material class: |
Dichalcogen |
Material class: |
Alloy |
Properties: |
Semiconductor |
Properties: |
Ultragap |
Band gap range: |
UV |
Growth method: |
Flux |
Doping: |
Undoped |
