Description
2 inch full area coverage MoS2, MoSe2, WS2, WSe2 monolayers (few-layers are available on request) on 2 inch size c-cut sapphire substrates. CVD TMDs are all highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness.
Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). Our samples are always highly luminescent, highly crystallized and does not contain carbon contaminant layer
Sample Properties
| Sample size | 2'' wafer size |
| Substrate type | (0001) c-cut sapphire, SiO2/Si or custom substrates |
| Coverage | Full Coverage Monolayer TMDs, graphene, or hBN |
| Electrical properties | Excitonic and electronic grade |
| Crystal structure | Hexagonal Phase |
| Unit cell parameters | Depends on the type selected |
| Production method | Low pressure chemical vapor deposition (LPCVD) |
| Characterization methods | Raman, photoluminescence, TEM, EDS |
Specification.
- Identification. Full coverage 100% monolayer (few-layers are available on request) uniformly covered across c-cut sapphire
- Physical dimensions. 2'' diameter monolayers on various substrates.
- Smoothness. Atomically smooth surface with roughness < 0.15 nm.
- Uniformity. Highly uniform surface morphology. 2D monolayers (few-layers are also available) uniformly cover across the sample.
- Purity. 99.9995% purity as determined by nano-SIMS measurements
- Reliability. Repeatable Raman and photoluminescence response
- Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline sheets.
- Substrate. c-cut Sapphire, SiO2/Si or other substrates
- Support. 2Dsemiconductors USA is an American owned, regulated, and operated company. Our customers are well-protected by international as well as strict American customer laws and regulations. We give full technical support and guarantee your satisfaction with our well-established customer service
- Defect profile. 1E11cm-2 or lower.
Additional Information
Elements: |
Mo,W,S,Se |
Element: |
Molybdenum |
Element: |
Tungsten |
Element: |
Sulfur |
Element: |
Selenium |
Formula: |
MoS2, MoSe2, WS2, WSe2 |
Material class: |
MX2 |
Properties: |
Semiconductor |
Properties: |
Excitonic |
Band gap range: |
VIS |
Growth method: |
CVD |
Doping: |
Undoped |
Thin-film type: |
Monolayer |
Thin-film type: |
Few-layer |
Substrate: |
2" Sapphire |