Description
2 Inch Wafer Scale 2D Materials on Sapphire and SiO2/Si
Our 2 inch wafer scale 2D materials platform includes MoS2, MoSe2, WS2, WSe2, graphene, and hBN grown on premium sapphire and SiO2/Si substrates. Monolayer films are available as standard products, while few layer and multilayer thicknesses can be supplied upon request. These materials exhibit excellent crystallinity, strong Raman signatures, outstanding optical quality, and reliable electronic performance, making them ideal for advanced research and device development.
Why Researchers Choose Our Wafer Scale Films
Our films are synthesized using optimized plasma enhanced chemical vapor deposition (PECVD) processes with ultra high purity 6N precursor materials and gases in semiconductor grade manufacturing facilities. The result is highly crystalline material with excellent wafer scale coverage, large grain sizes, clean surfaces, and reproducible properties from wafer to wafer.
Researchers worldwide rely on our materials for their strong photoluminescence, sharp Raman response, excellent carrier transport characteristics, and consistent performance in electronic and optoelectronic devices. Our products are routinely used by leading universities, national laboratories, and industrial R&D teams.
Growth Quality
Our proprietary growth methods are designed to maximize crystal quality while maintaining excellent wafer scale uniformity. Typical crystalline domain sizes range from 1 to 50 microns depending on the material system and growth conditions. The films exhibit clean surfaces, low contamination levels, and material properties suitable for demanding characterization and fabrication workflows.
Sample Properties
| Sample size | 2'' wafer size |
| Substrate type | (0001) c-cut sapphire, SiO2/Si or custom substrates |
| Coverage | Full Coverage Monolayer TMDs, graphene, or hBN |
| Electrical properties | Excitonic and electronic grade |
| Crystal structure | Hexagonal Phase |
| Unit cell parameters | Depends on the type selected |
| Production method | Low pressure chemical vapor deposition (LPCVD) |
| Characterization methods | Raman, photoluminescence, TEM, EDS |
Specifications
Identification
Predominantly monolayer TMD films grown on c cut sapphire substrates. Few layer films and custom thicknesses are available upon request. Small localized variations in layer number may be present as is typical for wafer scale CVD growth.
Physical Dimensions
Available on 2 inch diameter wafers. Additional substrate sizes and substrate types may be available upon request.
Surface Morphology
Smooth continuous films suitable for optical characterization, device fabrication, transfer processes, and materials research.
Uniformity
Optimized for high wafer scale uniformity in thickness, optical response, and surface morphology. Minor local variations associated with grain boundaries, nucleation sites, terrace structures, wrinkles, and edge regions are characteristic of large area two dimensional materials.
Purity
Produced using ultra high purity precursor materials and semiconductor grade processing methods. Representative purity measurements may exceed 99.9995% depending on material system and analytical technique.
Reliability
Consistent Raman spectroscopy and photoluminescence response characteristic of high quality TMD monolayers.
Crystallinity
High crystalline quality confirmed through Raman spectroscopy, photoluminescence mapping, optical microscopy, and other characterization techniques. Material properties are consistent with high quality CVD grown TMD films reported in the scientific literature.
Substrates
Available on c cut sapphire, SiO2 on Si, quartz, and selected custom substrates.
Defect Density
Low defect density films produced through optimized growth conditions. Actual defect density may vary depending on material composition, substrate selection, wafer location, and characterization methodology.
Characterization Data
Representative Raman, photoluminescence, optical microscopy, AFM, and other characterization data are available upon request. Additional characterization services may be available.
Return Policy
All samples must be returned in their original condition for full return or replacement. Batch to batch variations can occur. The reliability and failure check points are defined by good Raman and PL as per academic standards. Small localized variations in layer number or imperfections (clusters, defects, grain boundaries and others) may be present as is typical for wafer scale CVD growth.
Technical Support
2D Semiconductors USA provides technical support before and after purchase, including guidance on handling, transfer, characterization, and device fabrication. Our team is committed to helping researchers obtain the best possible results from our materials.
Additional Information
Elements: |
Mo,W,S,Se |
Element: |
Molybdenum |
Element: |
Tungsten |
Element: |
Sulfur |
Element: |
Selenium |
Formula: |
MoS2, MoSe2, WS2, WSe2 |
Material class: |
MX2 |
Properties: |
Semiconductor |
Properties: |
Excitonic |
Band gap range: |
VIS |
Growth method: |
CVD |
Doping: |
Undoped |
Thin-film type: |
Monolayer |
Thin-film type: |
Few-layer |
Substrate: |
2" Sapphire |