Description
Premium Ultra-Flat Large-Area Bi2Se3 Crystals for Large-Area Exfoliation
After more than five years of dedicated research and development, 2Dsemiconductors is proud to offer Ultra-Flat Large-Area Bi2Se3 Crystals, engineered specifically for large-area exfoliation and advanced transfer techniques, including Au-assisted exfoliation.
These high-quality synthetic single crystals are produced using our optimized Bridgman growth method and are available in exceptionally large formats, with individual crystals exceeding 2 cm in lateral size. Their excellent crystalline quality, large atomically flat terraces, and highly uniform surfaces make them particularly well suited for exfoliation, heterostructure assembly, and device fabrication.
We offer some of the largest and highest-quality commercially available Bi2Se3 single crystals for research applications.
The combination of large crystal dimensions, excellent surface flatness, and high structural quality makes these crystals ideal for advanced electronic, optoelectronic, topological, and quantum-materials research.
| Crystal Size | Ultra-flat crystals ~2cm size |
| Dopants | Undoped (intrinsic semiconductor) |
| Material properties | Topological |
| Crystal structure | Rhombohedral phase |
| Unit cell perameters |
a = b = 0.414 nm, c = 2.864 nm, α = β = 90°, γ = 120° |
| Growth methods | Bridgman growth (no halide contamination) defect free. |
| Purity | 99.9999% confirmed |
Additional Information
Elements: |
Bi,Se |
Element: |
Bismuth |
Element: |
Selenium |
Formula: |
Bi2Se3 |
Material class: |
M2X3 |
Material class: |
Topological |
Properties: |
Semiconductor |
Properties: |
Topological |
Band gap range: |
IR |
Growth method: |
Bridgman |
Doping: |
Undoped |
