Description
GaGeTe is a layered crystal with unique crystal structure and exciting electronic properties. Its band gap spans from 0.01 eV to 0.7 eV depending on its thickness and its band exhibits high carrier mobility. These attributes make this particular material exciting for infrared (IR) technologies as well as telecom range applications. While theoretically its properties are starting to emerge, fundamental properties of these materials are still at its infancy from an experimental perspective. Our GaGeTe crystals have been synthesized using high pressure flux techniques to yield these unique material systems.
The properties of GaGeTe layered crystals
| Sample size | Each order contains a number of 3-4 mm sized crystal |
| Material properties | High mobility IR semiconductor |
| Crystal structure | R3m trigonal phase |
| Degree of exfoliation | medium hard to exfoliate |
| Production method | High pressure growth |
| Other characteristics |
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Additional Information
Elements: |
Ga,Ge,Te |
Element: |
Gallium |
Element: |
Germanium |
Element: |
Tellurium |
Formula: |
GaGeTe |
Material class: |
MX |
Properties: |
Semiconductor |
Band gap range: |
VIS |
Band gap range: |
IR |
Growth method: |
High pressure |
Doping: |
Undoped |