Description
We provide the world's largest size commercially available GaSe crystals at the highest quality GaSe and affordable prices. Our crystals exceed competing crystals both in size and quality.
Description
Undoped GaSe crystals growth by Bridgman or chemical vapor transport techniques. Undoped GaSe crystals exhibit highly layered characteristics and are ideal for exfoliation, device fabrication, optics, and other optoelectronics related experiments. Our crystals are developed and optimized in the last 15 years to offer highest grade (optical, electronic, and photonic grade) perfectly layered crystals.p-Type GaSe
Our p-type GaSe crystals are grown using Bridgman growth technique and the crystal were doped to n-type using Cd (cadmium) atoms at around 1E18cm-3 range. P-type GaSe crystals exhibit highly layered characteristics and are ideal for exfoliation, device fabrication, optics, and other optoelectronics related experiments.
n-Type GaSe
Our n-type GaSe crystals are grown using Bridgman growth technique and the crystal were doped to n-type using Sn atoms at around 1E18cm-3 range. N-type GaSe crystals exhibit highly layered characteristics and are ideal for exfoliation, device fabrication, optics, and other optoelectronics related experiments.
The physical properties of GaSe crystals
| Sample size | centimeter or larger in size |
| Properties |
Direct gap semiconductor (2 eV direct gap semiconductor) |
| crystal structure and exfoliation | Hexagonal phase a=b=0.376 nm c=1.596 nm,α=β=90° γ=120° Very easy to exfoliate |
| Production method | Default Bridgman growth technique (Undoped, p-Type, n-Type) CVT grown GaSe crystals available |
GaSe XRD datasets
HRTEM characterization on GaSe crystals
AFM images collected from exfoliated GaSe on SiO2/Si substrates
Raman spectrum taken on GaSe sheets (532 nm excitation laser)
Photoluminescence (PL) spectra collected from GaSe crystals
Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.
Publications
A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors
Nanoscale Adv., 2022, 4, 479-490
Layer-Dependent Nonlinear Optical Properties and Stability of Non-Centrosymmetric Modification in Few-Layer GaSe Sheets; Link: https://onlinelibrary.wiley.com/doi/epdf/10.1002/anie.201409837
Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors; ACS Nano, 2012, 6 (7), pp 5988–5994
Additional Information
Elements: |
Ga,Se |
Element: |
Gallium |
Element: |
Selenium |
Formula: |
GaSe |
Material class: |
MX |
Properties: |
Semiconductor |
Band gap range: |
VIS |
Growth method: |
Bridgman |
Growth method: |
CVT |
Doping: |
Undoped |
Doping: |
p-Type |
Doping: |
n-Type |
Growth method: |
Flux |
