Description
SnBi6Te10 is a layered ternary chalcogenide in the Bi–Te–Sn family that exhibits promising topological, thermoelectric behavior and van der Waals layering. Crystallizing in a rhombohedral phase, SnBi6Te10 displays low lattice thermal conductivity, high carrier mobility, and resonant impurity effects from Sn incorporation. These features make it attractive for both mid-temperature thermoelectric applications and quantum transport studies. The van der Waals structure enables easy exfoliation down to few-layer thicknesses, suitable for device fabrication and interfacial engineering.
Our SnBi6Te10 single crystals are synthesized using a Te-rich flux growth technique to ensure high phase purity and structural uniformity. Each sample contains large, well-faceted crystals ranging from 4 to 7 mm in lateral dimensions.
The properties of SnBi6Te10 crystals
| Property | Details |
|---|---|
| Sample Size | 4–7 mm crystals |
| Material Properties | Thermoelectric; topological; unusual thermal conductivity |
| Crystal Structure | Rhombohedral layered (space group R-3m) |
| Degree of Exfoliation | Easy; few-layer flakes readily accessible |
| Production Method | Te-rich flux growth with slow cooling |
| Purity | High purity; phase-selective synthesis |
Additional Information
Elements: |
Sn,Bi,Te |
Element: |
Tin |
Element: |
Bismuth |
Element: |
Tellurium |
Formula: |
SnBi6Te10 |
Material class: |
Tellurides |
Properties: |
Topological |
Properties: |
Thermoelectric |
