Description
We provide the world's largest size commercially available SnSe crystals at the highest quality SnSe and affordable prices. Our crystals exceed competing crystals both in size and quality.
Description
In the bulk form SnSe has band-gap at around 0.9 eV (indirect) and 1.25 direct gaps. It has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers. Each monolayer is four atoms thick (Se-Sn-Sn-Se) that is roughly 0.9-1.0 nm. At high pressures it undergo semiconductor to superconductor transition. More recently, SnSe has been shown to display world record performance for thermoelectric material efficiency. By default, we ship flux zone grown crystals for highest performance.
SnSe single crystal characteristics
| Sample size | Centimeter in size |
| Material properties | Thermoelectric and anisotropic semiconductor |
| Crystal structure | Pnma |
| Degree of exfoliation | Easy to exfoliate |
| Production method | Bridgman growth (6N pure) [CVT optional at 5.5N purity] |
| Other characteristics |
|
Raman spectrum collected from SnSe crystals
References
Functional Monochalcogenides: Raman Evidence Linking Properties, Structure, and Metavalent Bonding
Christophe Bellin, Amit Pawbake, Lorenzo Paulatto, Keevin Béneut, Johan Biscaras, Chandrabhas Narayana, Alain Polian, Dattatray J. Late, and Abhay Shukla
Phys. Rev. Lett. 125, 145301 (2020)
Additional Information
Elements: |
Sn,Se |
Element: |
Tin |
Element: |
Selenium |
Formula: |
SnSe |
Material class: |
MX |
Properties: |
Semiconductor |
Properties: |
Thermoelectric |
Band gap range: |
IR |
Growth method: |
Bridgman |
Growth method: |
CVT |
Doping: |
Undoped |
