Description
The current batch of 2H-TaS2 crystals are grown using flux zone growth using 6N or higher purity precursors. They crystal size measures ~8-10mm
Detailed information
2H-phase TaS2 is a 2D superconductor with critical temperature (Tc) of 0.2K, and exhibit incommensurate charge density waves (CDW) below ~80K. Our crystals are grown by either flux zone method to achieve defect free crystals or CVT method which is known to introduce halide contaminants in the crystal. By default, we ship flux zone 2H-TaS2 crystals with guaranteed superconducting and CDW behavior (the only commercially vdW TaS2 crystals with guaranteed CDW and SC behavior). Our crystals are environmentally stable which means that they can be handled safely under ambient conditions without any need for chemical fume hood or inert glove box.
While both 2H- and 1T-phase TaS2 crystals exhibit CDW behavior, temperature onset for CDW behavior show considerable differences (1T~175K where as 2H~80K). Our TaS2 crystals are perfectly layered, cleaved in 0001 direction, with ultra-low defect concentration. Flux zone grown 2H-TaS2 crystals come with guaranteed CDW behavior. For our 1T-TaS2 crystals please click here.
Flux zone vs. CVT growth method: Contamination and defects in TaS2 crystals are well known to influence CDW behavior. (temperature onset, ability to observe, sheet resistance). Flux zone technique is a halide free and slow growth technique used for synthesizing truly electronic grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique provides quick (~2 weeks) growth but poor crystalline quality while flux method takes ~3 months, ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as default choice.
Properties of 2H phase TaS2 crystals - 2Dsemiconductors USA
TaS2 (2H phase) | CDW (~80k), metal, semimetal, low T꜀ superconductor (~2K) |
Crystal structure | Hexagonal |
Unit cell parameters | a=b=0.330 nm, c=1.209 nm; α=β=90° γ=120° |
Growth method | [Default] Flux zone (no halide contamination) defect free [Optional CVT]: Contains Br2, Cl2, TeCl4, and other halides |
Purity | 99.9999% confirmed |
XRD data from 2H phase TaS2 crystals - 2Dsemiconductors USA
Additional Information
Elements: |
Ta,S |
Element: |
Tantalum |
Element: |
Sulfur |
Formula: |
TaS2 |
Material class: |
MX2 |
Material class: |
Dichalcogen |
Properties: |
Superconductor |
Properties: |
CDW |
Growth method: |
Flux |
Growth method: |
CVT |
Doping: |
Undoped |