MoTe2 Crystal (2H phase)

  • Large size 2H MoTe2 crystals - 2Dsemiconductors USA
  • Large size 2H MoTe2 crystals - 2Dsemiconductors USA
  • Large size 2H MoTe2 crystals - 2Dsemiconductors USA
  • MoTe2 Crystal (2H phase)
  • PL spectrum of 2H phase MoTe2 vdW crystals - 2Dsemiconductors USA
  • Raman spectrum of 2H phase MoTe2 crystals - 2Dsemiconductors USA
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We provide the world's largest size commercially available 2H-MoTe2 crystals at the highest quality and affordable prices. CVT crystals measure >cm size! Flux grown crystals reach up to cm sizes. 20 years of growth optimization in chemical vapor transport (CVT) as well as flux growth lead to our flawless WS2 crystals: The only commercial MoTe2 crystals that come with guaranteed valleytronic and PL responses. 

Status: In stock

Flux grown: MoTe2 crystals will exhibit superior electronic, valleytronic performance with perfect crystallization, defect free structure, extremely narrow PL bandwidths, clean PL spectra (free of bound exciton shoulders), and high carrier mobility.

CVT grown: These samples will be more comparable to other commercially available materials with some defects and lower electronic/optical quality but at slightly larger sizes. 

2H semiconducting phase of MoTe2 crystals contain layers that are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Our large size 2H-MoTe2 vdW crystals are treated as gold standards in 2D materials field. They come with guaranteed valleytronic performance, clean PL spectrum, perfect crystallization, and defect free structure. Our MoTe2 crystals are synthesized two different methods (flux zone and chemical vapor transport). While flux zone provides extremely clean MoTe2 crystals, CVT method often introduces halide contaminants. For comparison between these tow methods, please see the information below. If your research needs electronically doped MoTe2 crystals, please contact us.

Characteristics of 2H-MoTe2 crystals from 2Dsemiconductors USA

Dopants Undoped (intrinsic semiconductor)
Material properties 1.2 eV direct gap semiconductors (monolayer)
Crystal structure
Hexagonal phase
Unit cell parameters a=b=0.350 nm, c=1.341 nm; α=β=90° γ=120°
Growth method [Default] Flux zone (no halide contamination) defect free
[Optional CVT]: Contains Br2, Cl2, TeCl4, and other halides
Purity 99.9999% confirmed


Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 

 XRD data collected from 2H-MoTe2 crystals
PL spectrum and Raman spectrum collected from mono-, few-layer, and thick 2H phase semiconducting MoTe2 crystals
Partial List of Publications Using This Product

Writing monolithic integrated circuits on a two-dimensional semiconductor with a scanning light probe
Nature Electronics volume 1, pages512–517 (2018)

Y. Li et. al. "Room-temperature continuous-wave lasing from monolayer molybdenum ditelluride integrated with a silicon nanobeam cavity"
Nature Nanotechnology volume 12, pages 987–992 (2017)

Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers, Phys. Rev. Lett. 117, 187401 (2016)

Tony Heinz Team "Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals" Nano Letters 2014, 14, 6231−6236

Physical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayer MoTe2; Q. J. Song, Q. H. Tan, X. Zhang, J. B. Wu, B. W. Sheng, Y. Wan, X. Q. Wang, L. Dai, and P. H. Tan; Phys. Rev. B 93, 115409 (2016)

Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2; Ignacio Gutiérrez Lezama et. al. Nano Letters 2015, 15 (4), pp 2336–2342 DOI: 10.1021/nl5045007

Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2, Yilei Li, Alexey Chernikov, Xian Zhang, Albert Rigosi, Heather M. Hill, Arend M. van der Zande, Daniel A. Chenet, En-Min Shih, James Hone, and Tony F. Heinz; Phys. Rev. B 90, 205422 (2014)

M. Yankowitz et. al. "Intrinsic Disorder in Graphene on Transition Metal Dichalcogenide Heterostructures" Nano Letters, 2015, 15 (3), pp 1925–1929

H. C. Diaz "Molecular beam epitaxy of the van der Waals heterostructure MoTe2 on MoS2: phase, thermal, and chemical stability" 2D Materials, Volume 2, Number 4 (2015)

S. Vishwanath et. al. "MBE growth of few-layer 2H-MoTe2 on 3D substrates" Journal of Crystal Growth, 482, Pages 61-69 (2018)

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