Description
We provide high-purity TaN (Tantalum Nitride) thin films on SiO2/Si tailored for superconducting applications. These films are synthesized using pulsed laser deposition (PLD), ensuring precise stoichiometry and low defect densities. Product offers excellent uniformity and control over thickness.
Properties of TaN Thin Films
| Sample Size | Thin films (custom sizes available) |
|---|---|
| General property | Metallic / Superconducting |
| Crystal Structure | B1 cubic or hexagonal (phase-controllable) |
| Surface Roughness | <1 nm (RMS) |
| Production Method | Pulsed laser deposition (PLD) |
| Other Characteristics | Low defect density, high uniformity, oxidation-resistant |
Additional Information
Elements: |
Ti, N |
Element: |
Titanium |
Element: |
Nitrogen |
Formula: |
TiN |
Material Class: |
Nitrides |
Properties: |
Metal |
Properties: |
Superconductor |
Growth Method: |
Pulsed laser deposition |
Substrate: |
SiO2/Si |
